| Number of channels: | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 16 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 4.4 |
| Rail-to-rail: | In to V-, Out |
| GBW (typ) (MHz): | 2.18 |
| Slew rate (typ) (V/µs): | 3.6 |
| Vos (offset voltage at 25°C) (max) (mV): | 0.95 |
| Iq per channel (typ) (mA): | 1.1 |
| Vn at 1 kHz (typ) (nV√Hz): | 9 |
| Rating: | Military |
| Operating temperature range (°C): | -55 to 125 |
| Offset drift (typ) (µV/°C): | 2 |
| Features: | High Cload Drive |
| Input bias current (max) (pA): | 60 |
| CMRR (typ) (dB): | 75 |
| Iout (typ) (A): | 0.0022 |
| Architecture: | CMOS |
| Input common mode headroom (to negative supply) (typ) (V): | -0.3 |
| Input common mode headroom (to positive supply) (typ) (V): | -0.8 |
| Output swing headroom (to negative supply) (typ) (V): | 0.01 |
| Output swing headroom (to positive supply) (typ) (V): | -0.06 |
| Number of channels: | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): | 16 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): | 4.4 |
| Rail-to-rail: | In to V-, Out |
| GBW (typ) (MHz): | 2.18 |
| Slew rate (typ) (V/µs): | 3.6 |
| Vos (offset voltage at 25°C) (max) (mV): | 0.95 |
| Iq per channel (typ) (mA): | 1.1 |
| Vn at 1 kHz (typ) (nV√Hz): | 9 |
| Rating: | Military |
| Operating temperature range (°C): | -55 to 125 |
| Offset drift (typ) (µV/°C): | 2 |
| Features: | High Cload Drive |
| Input bias current (max) (pA): | 60 |
| CMRR (typ) (dB): | 75 |
| Iout (typ) (A): | 0.0022 |
| Architecture: | CMOS |
| Input common mode headroom (to negative supply) (typ) (V): | -0.3 |
| Input common mode headroom (to positive supply) (typ) (V): | -0.8 |
| Output swing headroom (to negative supply) (typ) (V): | 0.01 |
| Output swing headroom (to positive supply) (typ) (V): | -0.06 |
